2sc5551a no. a1118-1/6 features ? high f t : (f t =3.5ghz typ) ? large current : (i c =300ma) ? large allowable collector dissipation (1.3w max) speci cations absolute maximum ratings at ta=25c parameter symbol conditions ratings unit collector-to-base voltage v cbo 40 v collector-to-emitter voltage v ceo 30 v emitter-to-base voltage v ebo 2v collector current i c 300 ma collector current (pulse) i cp 600 ma collector dissipation p c when mounted on ceramic substrate (250mm 2 0.8mm) 1.3 w junction temperature tj 150 c storage temperature tstg --55 to +150 c package dimensions unit : mm (typ) 7007b-004 ordering number : ENA1118A 80812 tkim/d0209ab tkim tc-00002042 sanyo semiconductors data sheet http://www.sanyosemi.com/en/network/ product & package information ? package : pcp ? jeita, jedec : sc-62, sot-89, to-243 ? minimum packing quantity : 1,000 pcs./reel packing type: td marking electrical connection td 1 : base 2 : collector 3 : emitter sanyo : pcp 2.5 4.0 1.0 1.5 0.5 0.4 3.0 4.5 1.6 0.4 123 1.5 0.75 top view bottom view 2sc5551ae-td-e 2sc5551af-td-e eb lot no. rank 2 3 1 2sc5551a npn epitaxial planar silicon transistor high-frequency medium-output ampli er applications
2sc5551a no. a1118-2/6 electrical characteristics at ta=25c parameter symbol conditions ratings unit min typ max collector cutoff current i cbo v cb =20v, i e =0a 1.0 a emitter cutoff current i ebo v eb =1v, i c =0a 5.0 a dc current gain h fe 1v ce =5v, i c =50ma 90 270 h fe 2v ce =5v, i c =300ma 20 gain-bandwidth product f t v ce =5v, i c =50ma 3.5 ghz output capacitance cob v cb =10v, f=1mhz 2.9 4.0 pf reverse transfer capacitance cre 1.5 pf collector-to-emitter saturation voltage v ce (sat) i c =50ma, i b =5ma 0.07 0.3 v base-to-emitter saturation voltage v be (sat) i c =50ma, i b =5ma 0.8 1.2 v * : the 2sc5551a is classi ed by 50ma h fe as follows : rank e f h fe 90 to 180 135 to 270 ordering information device package shipping memo 2sc5551ae-td-e pcp 1,000pcs./reel pb free 2sc5551af-td-e pcp 1,000pcs./reel h fe -- i c collector current, i c -- ma dc current gain, h fe collector-to-emitter voltage, v ce -- v collector current, i c -- ma i c -- v ce 0 0 20 it01066 it01067 500 a 450 a 400 a 350 a 300 a 250 a 200 a 150 a 100 a 50 a 40 60 80 100 4 12 8 16 20 1.0 10 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 2 3 5 7 100 2 3 5 7 1000 v ce =5v i b =0 a
2sc5551a no. a1118-3/6 ? s21e ? 2 -- i c collector current, i c -- ma forward transfer gain, ? s21e ? 2 -- db collector dissipation, p c -- w p c -- ta ambient temperature, ta -- c cob, cre -- v cb collector-to-base voltage, v cb -- v collector current, i c -- ma gain-bandwidth product, f t -- ghz f t -- i c collector current, i c -- ma a s o collector-to-emitter voltage, v ce -- v v ce (sat) -- i c collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- v it01070 it01072 it01071 it01073 1.0 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 10 cob cre f=1mhz v ce =5v 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 0.1 2 3 5 7 1.0 2 3 5 7 10 1.0 2 3 5 7 10 2 35 10 2 3 5 7 100 2 3 5 7 1000 i c =300ma i cp =600ma dc operation 0204060 80 100 120 140 160 0 0.2 0.4 0.6 0.8 1.0 1.2 1.3 1.4 1ms 10ms it01069 v ce =5v 1.0 2 3 5 7 10 2 3 5 7 100 2 3 5 7 1000 0 2 4 6 8 10 12 14 16 18 20 f=200mhz f=500mhz when mounted on ceramic substrate (250mm 2 ? 0.8mm) ta=25 c single pulse when mounted on ceramic substrate (250mm 2 ? 0.8mm) output capacitance, reverse transfer capacitance, cob, cre -- pf it15252 1.0 2 3 5 7 10 2 3 5 7 100 2 3 57 2 3 5 7 0.1 2 3 5 7 i c / i b =10
2sc5551a no. a1118-4/6 bag packing speci cation 2sc5551ae-td-e, 2sc5551af-td-e
2sc5551a no. a1118-5/6 outline drawing land pattern example 2sc5551ae-td-e, 2sc5551af-td-e mass (g) unit 0.058 * for reference mm unit: mm 2.2 1.0 1.8 1.5 0.9 3.7 1.5 3.0 1.0 45 45
2sc5551a ps no. a1118-6/6 this catalog provides information as of august, 2012. speci cations and information herein are subject to change without notice. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage condition (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. sanyo semiconductor co.,ltd. assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. regarding monolithic semiconductors, if you should intend to use this ic continuously under high temperature, high current, high voltage, or drastic temperature change, even if it is used within the range of absolute maximum ratings or operating conditions, there is a possibility of decrease reliability. please contact us for a confirmation. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliability products, however, any and all semiconductor products fail or malfunction with some probability. it is possible that these probabilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellectual property rights which has resulted from the use of the technical information and products mentioned above.
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